Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition

Identification of Prismatic Slip Bands in 4H SiC Boules Grown by Physical Vapor Transport

Transmission electron microscopy (TEM) and KOH etching have been used to study the dislocation structure of 4H SiC wafers grown by physical vapor transport. A new type of threading dislocation arrays was observed. Rows of etch pits corresponding to dislocation arrays were observed in vicinity of micropipes, misoriented grains and polytypic inclusions at the periphery of the boules and extended ...

Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

The Si(0001) face and C(000-1) face dependences on growth pressure of epitaxial graphene (EG) grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD) was studied using atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur...

Observation of glassy ferromagnetism in Al-doped 4H-SiC.

Glassy ferromagnetism is observed in diluted magnetic semiconductor Al-doped 4H-SiC. We propose a possible explanation for the origin of ferromagnetism order that is the coeffect of sp(2)/sp(3) configuration along with the structural defects. This result unambiguously demonstrates the existence of intrinsic ferromagnetism order in nonmagnetic sp systems.

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates

I Tsiaoussis, Volodymyr Khranovskyy, G P Dimitrakopulos, J Stoemenos, Rositsa Yakimova and B Pecz, Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates, 2011, JOURNAL OF APPLIED PHYSICS, (109), 4, 043507. http://dx.doi.org/10.1063/1.3549140 Copyright: American Institute of Physics http://www....